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InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Identifieur interne : 002C39 ( Main/Repository ); précédent : 002C38; suivant : 002C40

InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Auteurs : RBID : Pascal:11-0330580

Descripteurs français

Pascal (Inist)
- Arséniure d'indium, Semiconducteur III-V, Composé III-V, Arséniure de gallium, Point quantique, Nanomatériau, Pastille électronique, Epitaxie jet moléculaire, Microscopie électronique balayage, Densité élevée, Mécanisme croissance, InAs, GaAs, Substrat GaAs, 8105E, 8107T, 8535B, 8107B.

English descriptors

KwdEn :
- Gallium arsenides, Growth mechanism, High density, III-V compound, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Nanostructured materials, Quantum dots, Scanning electron microscopy, Wafers.

Abstract

Variations in quantum dot density across 16 different 2 in quarter wafers have been studied. The InAs/GaAs quantum dots (QDs) were grown on n-type GaAs(0 0 1) substrates by molecular beam epitaxy and studied by scanning electron microscopy (SEM). The SEM study reveals large variations in QD density and size homogeneity across the 16 quarter wafers. A representative sample was studied in great detail. For this sample the QD density is lower in the middle of the 1/4-wafer than along the rims, and also considerably higher in one of the corners compared to the other two corners. The QD diameters and size homogeneity are reduced in areas with high QD density compared to areas with low QD density. The above variations are believed to be mainly due to temperature variations across the 1/4-wafer during growth of the QDs.

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Pascal:11-0330580

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation</title>
<author><name sortKey="Thomassen, S Fretheim" uniqKey="Thomassen S">S. Fretheim Thomassen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Norwegian University of Science and Technology</s1>
<s2>7491 Trondheim</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>7491 Trondheim</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Worren Reenaas, T" uniqKey="Worren Reenaas T">T. Worren Reenaas</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Norwegian University of Science and Technology</s1>
<s2>7491 Trondheim</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>7491 Trondheim</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Fimland, B O" uniqKey="Fimland B">B. O Fimland</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronics and Telecommunications, Norwegian University of Science and Technology</s1>
<s2>7491 Trondheim</s2>
<s3>NOR</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>7491 Trondheim</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0330580</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0330580 INIST</idno>
<idno type="RBID">Pascal:11-0330580</idno>
<idno type="wicri:Area/Main/Corpus">002D74</idno>
<idno type="wicri:Area/Main/Repository">002C39</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium arsenides</term>
<term>Growth mechanism</term>
<term>High density</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Quantum dots</term>
<term>Scanning electron microscopy</term>
<term>Wafers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Arséniure de gallium</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Pastille électronique</term>
<term>Epitaxie jet moléculaire</term>
<term>Microscopie électronique balayage</term>
<term>Densité élevée</term>
<term>Mécanisme croissance</term>
<term>InAs</term>
<term>GaAs</term>
<term>Substrat GaAs</term>
<term>8105E</term>
<term>8107T</term>
<term>8535B</term>
<term>8107B</term>
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<front><div type="abstract" xml:lang="en">Variations in quantum dot density across 16 different 2 in quarter wafers have been studied. The InAs/GaAs quantum dots (QDs) were grown on n-type GaAs(0 0 1) substrates by molecular beam epitaxy and studied by scanning electron microscopy (SEM). The SEM study reveals large variations in QD density and size homogeneity across the 16 quarter wafers. A representative sample was studied in great detail. For this sample the QD density is lower in the middle of the 1/4-wafer than along the rims, and also considerably higher in one of the corners compared to the other two corners. The QD diameters and size homogeneity are reduced in areas with high QD density compared to areas with low QD density. The above variations are believed to be mainly due to temperature variations across the 1/4-wafer during growth of the QDs.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>THOMASSEN (S. Fretheim)</s1>
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<fA11 i1="02" i2="1"><s1>WORREN REENAAS (T.)</s1>
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<fA11 i1="03" i2="1"><s1>FIMLAND (B. O)</s1>
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<fA12 i1="01" i2="1"><s1>GEELHAAR (Lutz)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>HEYN (Christian)</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>WIECK (Andreas D.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Department of Physics, Norwegian University of Science and Technology</s1>
<s2>7491 Trondheim</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fA14 i1="02"><s1>Department of Electronics and Telecommunications, Norwegian University of Science and Technology</s1>
<s2>7491 Trondheim</s2>
<s3>NOR</s3>
<sZ>3 aut.</sZ>
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<fA15 i1="01"><s1>Paul-Drude-Institut für Festkörperelektronik</s1>
<s2>Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of Hambourg</s1>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>University of Bochum</s1>
<s3>DEU</s3>
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<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
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<fA47 i1="01" i2="1"><s0>11-0330580</s0>
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<fC01 i1="01" l="ENG"><s0>Variations in quantum dot density across 16 different 2 in quarter wafers have been studied. The InAs/GaAs quantum dots (QDs) were grown on n-type GaAs(0 0 1) substrates by molecular beam epitaxy and studied by scanning electron microscopy (SEM). The SEM study reveals large variations in QD density and size homogeneity across the 16 quarter wafers. A representative sample was studied in great detail. For this sample the QD density is lower in the middle of the 1/4-wafer than along the rims, and also considerably higher in one of the corners compared to the other two corners. The QD diameters and size homogeneity are reduced in areas with high QD density compared to areas with low QD density. The above variations are believed to be mainly due to temperature variations across the 1/4-wafer during growth of the QDs.</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>01</s5>
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<s2>NK</s2>
<s5>01</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s2>NK</s2>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>11</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>71</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>72</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>8535B</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>227</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1>
<s2>16</s2>
<s3>Berlin DEU</s3>
<s4>2010-08-22</s4>
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InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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